According to a website called 9To5Google, Samsung Electronics Co.'s breakthrough on chips would lead to a future of smartphones with 384GB storage. This week, the tech giant announced that it already began mass-producing "the industry's first three-dimensional (3D) Vertical NAND (V-NAND) flash memory, which breaks through the current scaling limit for existing NAND flash technology."
Samsung is stacking "up to 24 layers of 16GB storage on top of each other in a chip not much thicker than existing ones." In order to achieve the advanced memory technology, Samsung overhauled its CTF architecture which was initially created in 2006.
The South Korean company started its research on 3D Vertical NAND almost a decade ago. It has more than 300 pending patents on 3D memory technologies globally. IHS iSuppli said that by the end of 2016, the worldwide market for NAND flash memory is projected to earn an approximate US$30.8 billion in revenues.
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